Open AccessBroadening the absorption bandwidth based on heavily doped semiconductor nanostructures
Author(s) -
Anatoliy V. Goncharenko,
Volodymyr Fitio,
V. M. Silkin
Publication year - 2022
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.472788
Subject(s) - materials science , optoelectronics , optics , metamaterial , semiconductor , broadband , silicon , doping , bandwidth (computing) , absorption (acoustics) , dielectric , telecommunications , physics , computer science , composite material
Broadband light absorption is a basis for the proper functionality of various materials, microstructures, and devices. Despite numerous studies, however, many aspects of broadband absorption remain uncovered. In this paper, we demonstrate an inverse-problem approach to designing nanostructures with a very low optical reflection and high absorption through a frequency band. Particular emphasis is made on a subwavelength transparent film as a top layer and anisotropic substrate. The polarization-dependent metamaterial absorber based on a subwavelenth semiconductor multicomponent multilayer structure is proposed and numerically investigated. For an illustration, we consider a four-component heavily doped silicon lattice with a thin undoped silicon top layer. The dielectric response of the structure is engineered by controlling the free carrier density and filling factor of each layer. A simulation study reveals a power law dependence of the bandwidth on the maximum reflectivity within the band.