
High-performance quantum cascade lasers at λ ∼ 9 µm grown by MOCVD
Author(s) -
Yongqiang Sun,
Ran Yin,
jinchuan zhang,
Junqi Liu,
Fei Teng,
Kun Li,
Kai Guo,
Zhiwei Jia,
Shuman Liu,
Quanyong Lu,
Ning Zhuo,
Lijun Wang,
Fengqi Liu,
Shenqiang Zhai
Publication year - 2022
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.469573
Subject(s) - materials science , metalorganic vapour phase epitaxy , full width at half maximum , optoelectronics , quantum cascade laser , cascade , laser , optics , chemical vapor deposition , quantum efficiency , slope efficiency , temperature coefficient , reflection coefficient , atmospheric temperature range , continuous wave , wavelength , physics , fiber laser , epitaxy , chemistry , layer (electronics) , chromatography , terahertz radiation , meteorology , composite material
We demonstrate a high power InP-based quantum cascade laser (QCL) (λ ∼ 9 µm) with high characteristic temperature grown by metalorganic chemical vapor deposition (MOCVD) in this article. A 4-mm-long cavity length, 10.5-µm-wide ridge QCL with high-reflection (HR) coating demonstrates a maximum pulsed peak power of 1.55 W and continuous-wave (CW) output power of 1.02W at 293 K. The pulsed threshold current density of the device is as low as 1.52 kA/cm 2 . The active region adopted a dual-upper-state (DAU) and multiple-lower-state (MS) design and it shows a wide electroluminescence (EL) spectrum with 466 cm -1 wide full-width at half maximum (FWHM). In addition, the device performance is insensitive to the temperature change since the threshold-current characteristic temperature coefficient, T 0 , is as high as 228 K, and slope-efficiency characteristic temperature coefficient, T 1 , is as high as 680 K, over the heatsink-temperature range of 293 K to 353 K.