Open AccessHigh-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra
Author(s) -
Junkai Jiang,
Guowei Wang,
Donghai Wu,
Yingqiang Xu,
Faran Chang,
Wenguang Zhou,
g Li,
Dongwei Jiang,
Hongyue Hao,
Su-Ning Cui,
Weiqiang Chen,
Xueyue Xu,
Haiqiao Ni,
Ying Ding,
Zhichuan Niu
Publication year - 2022
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.469147
Subject(s) - responsivity , dark current , photodetector , superlattice , materials science , optoelectronics , optics , specific detectivity , biasing , quantum efficiency , cutoff frequency , infrared , wavelength , voltage , physics , quantum mechanics
High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.5 µm, respectively. Under -130 mV bias voltage, the device exhibits a peak responsivity of 0.56 A/W, corresponding to a quantum efficiency (QE) of 28%. The dark current density at 0 mV and -130 mV bias voltage are 8.17 × 10 -2 A/cm 2 and 5.02 × 10 -1 A/cm 2 , respectively. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.43 × 10 9 cm·Hz 1/2 /W (at a peak responsivity of 2.5 µm) under -130 mV of applied bias.
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