Open AccessTuning the persistent luminescence property of a Y3Al2Ga3O12:Ce3+,Yb3+ phosphor by controlling the intrinsic oxygen vacancy concentration
Author(s) -
Ting Yang,
Hongyi Jiang,
Dong Yang,
Shuning Liu,
Shuai Gao
Publication year - 2022
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.464393
Subject(s) - phosphor , thermoluminescence , luminescence , annealing (glass) , persistent luminescence , materials science , ion , analytical chemistry (journal) , optoelectronics , chemistry , chromatography , composite material , organic chemistry
Oxygen vacancies (V O ), acting as electron traps, have a significant impact on the persistent luminescence (PersL) property of persistent phosphors. However, the effect of V O on PersL remains still unclear enough to limit the development of PersL materials. In this study, the V O concentration of the Y 2.978 Ce 0.018 Yb 0.004 Al 2 Ga 3 O 12 phosphor is accurately controlled by annealing in air and 10%H 2 /90%Ar atmospheres at various temperatures. The results show as the annealing temperature increases during the air annealing the V O concentration, the PersL durations, and the thermoluminescence (TL) intensity constantly decreases, and the three data coincide well with each other, indicating the PersL property of the Y 2.978 Ce 0.018 Yb 0.004 Al 2 Ga 3 O 12 is successfully tuned. Besides, the trap structure of the Y 2.978 Ce 0.018 Yb 0.004 Al 2 Ga 3 O 12 and the charge compensation effect of Yb ions on V O defects are also discussed. By deconvoluting the TL curves, the Yb trap with a depth of 0.58 eV has been distinctly separated from the V O traps with a quasi-continuous and broad distribution of depths ranging from 0.58 to 1.21 eV. Our work demonstrates a better understanding of the relationship between V O and PersL is of great significance to design a high-performance phosphor.