Open AccessIon implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
Author(s) -
Julia Slawinska,
G. Muzioł,
M. Siekacz,
Henryk Turski,
Mateusz Hajdel,
M. Żak,
Anna FeduniewiczŻmuda,
G. Staszczak,
C. Skierbiszewski
Publication year - 2022
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.458950
Subject(s) - light emitting diode , materials science , optoelectronics , molecular beam epitaxy , diode , ion implantation , nitride , quantum well , focused ion beam , quantum efficiency , epitaxy , optics , tunnel junction , wavelength , aperture (computer memory) , ion , nanotechnology , chemistry , quantum tunnelling , laser , physics , organic chemistry , layer (electronics) , acoustics
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