Open AccessIntermedial annealing process applied during the growth of quantum wells and its influence on the performance of GaN-based laser diodes
Author(s) -
Feng Liang,
Degang Zhao,
Zongshun Liu,
Ping Chen,
Jing Yang
Publication year - 2022
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.449160
Subject(s) - materials science , annealing (glass) , photoluminescence , optoelectronics , metalorganic vapour phase epitaxy , quantum well , electroluminescence , chemical vapor deposition , diode , epitaxy , laser , light emitting diode , quantum efficiency , luminescence , optics , layer (electronics) , nanotechnology , composite material , physics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom