Open AccessCavity-enhanced InGaAs photo-FET with a metal gate reflector fabricated by wafer bonding on Si
Author(s) -
Sooseok Kang,
DaeHwan Ahn,
Inho Lee,
Won Jun Choi,
Jin Dong Song,
JaeHoon Han
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.443673
Subject(s) - materials science , optoelectronics , photodetector , wafer , indium gallium arsenide , reflector (photography) , optics , field effect transistor , gallium arsenide , transistor , electrical engineering , light source , physics , voltage , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom