Open AccessSTED microscopy reveals in-situ photoluminescence properties of single nanostructures in densely perovskite thin films
Author(s) -
Qingya Wang,
Qilin Qin,
Yuhan Chen,
Tieshan Yang,
Qinfeng Xu,
Haifeng Mu,
Jing Han,
Kunjian Cao,
Mengmeng Jiao,
Mingliang Liu,
Shufang Zhang,
ChuanLu Yang
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.442345
Subject(s) - sted microscopy , photoluminescence , materials science , perovskite (structure) , nanostructure , nanotechnology , thin film , nanometre , stimulated emission , nanomaterials , grain boundary , optoelectronics , laser , optics , chemistry , physics , microstructure , metallurgy , composite material , crystallography
All-inorganic perovskite nanomaterials have attracted much attention recently due to their prominent optical performance and potential application for optoelectronic devices. The carriers dynamics of all-inorganic perovskites has been the research focus because the understanding of carriers dynamics process is of critical importance for improving the fluorescence conversion efficiency. While photophysical properties of excited carrier are usually measured at the macroscopic scale, it is necessary to probe the in-situ dynamics process at the nanometer scale and gain deep insights into the photophysical mechanisms and their localized dependence on the thin-film nanostructures. Stimulated emission depletion (STED) nanoscopy with super-resolution beyond the diffraction limit can directly provide explicit information at a single particle level or nanometer scale. Through this unique technique, we firstly study the in-situ dynamics process of single CsPbBr 3 nanocrystals(NCs) and nanostructures embedded inside high-dense samples. Our findings reveal the different physical mechanisms of PL blinking and antibunching for single CsPbBr 3 NCs and nanostructures that correlate with thin-film nanostructural features (e.g. defects, grain boundaries and carrier mobility). The insights gained into such nanostructure-localized physical mechanisms are critically important for further improving the material quality and its corresponding device performance.