Open AccessHigh conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters
Author(s) -
Jianfeng Wang,
Burhan K. SaifAddin,
Christian J. Zollner,
Bastien Bonef,
Abdullah Almogbel,
Yaxuan Yao,
Michael Iza,
Yuewei Zhang,
Micha N. Fireman,
Erin C. Young,
Steven P. DenBaars,
Shuji Nakamura,
James S. Speck
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.436153
Subject(s) - materials science , molecular beam epitaxy , ohmic contact , analytical chemistry (journal) , doping , light emitting diode , metalorganic vapour phase epitaxy , epitaxy , substrate (aquarium) , optoelectronics , scanning electron microscope , silicon , contact resistance , optics , nanotechnology , chemistry , oceanography , physics , layer (electronics) , chromatography , geology , composite material