High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters | Zendy

Jianfeng Wang | Zendy; Burhan K. SaifAddin | Zendy; Christian J. Zollner | Zendy; Bastien Bonef | Zendy; Abdullah Almogbel | Zendy; Yifan Yao | Zendy; Michael Iza | Zendy; Yuewei Zhang | Zendy; Micha N. Fireman | Zendy; Erin C. Young | Zendy; Steven P. DenBaars | Zendy; Shuji Nakamura | Zendy; James S. Speck | Zendy

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High conductivity n-Al_0.6Ga_0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters

Author(s) -

Jianfeng Wang,

Burhan K. SaifAddin,

Christian J. Zollner,

Bastien Bonef,

Abdullah Almogbel,

Yifan Yao,

Michael Iza,

Yuewei Zhang,

Micha N. Fireman,

Erin C. Young,

Steven P. DenBaars,

Shuji Nakamura,

James S. Speck

Publication year - 2021

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.436153

Subject(s) - materials science , molecular beam epitaxy , ohmic contact , light emitting diode , analytical chemistry (journal) , doping , optoelectronics , substrate (aquarium) , metalorganic vapour phase epitaxy , epitaxy , scanning electron microscope , silicon , optics , nanotechnology , chemistry , oceanography , physics , layer (electronics) , chromatography , geology , composite material

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