Open AccessMonolithic integration of laser onto multilayer silicon nitride photonic integrated circuits with high efficiency at telecom wavelength
Author(s) -
Yisu Yang,
Huajun Zhao,
Xiaomin Ren,
Yongqing Huang
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.434913
Subject(s) - photonic integrated circuit , materials science , optoelectronics , laser , photonics , power dividers and directional couplers , coupling loss , optics , broadband , integrated circuit , silicon nitride , silicon photonics , insertion loss , output coupler , wavelength , bandwidth (computing) , silicon , optical fiber , telecommunications , physics , resonator , computer science
We propose a multilayer silicon nitride (SiN) -on-silicon photonic integrated circuit (PIC) platform with a monolithic laser at the C-band. A tapered edge coupler and a meta-structure-based interlayer directional coupler in the platform were designed to realize low-loss broadband laser-to-chip 3D coupling with small footprint. The coupling length of the interlayer directional coupler and the gap between different SiN layers were optimized as 12.7 µm and 1.4 µm. We measured the 1-dB-drop optical operation bandwidth of greater than 76 nm and the coupling loss of 6.1 ± 0.1 dB at 1550 nm for the interlayer directional coupler. The hybrid integration was demonstrated as a proof of concept for monolithic integration of light sources. The butt-coupling loss of 3.7 ± 0.1 dB between an on-chip DFB laser and a SiN edge coupler at 1549.48 nm was achieved. This approach opens the possibility of employing monolithic laser in the silicon photonics platform.