Open AccessDetermination of stress components in a complex stress condition using micro-Raman spectroscopy
Author(s) -
Lulu Ma,
Jiaxing Zheng,
Xuejun Fan,
Wei Qiu
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.434235
Subject(s) - raman spectroscopy , stress (linguistics) , materials science , optics , cauchy stress tensor , spectroscopy , component (thermodynamics) , tensor (intrinsic definition) , molecular physics , physics , mathematics , quantum mechanics , geometry , philosophy , linguistics
In this study, an iterative method using polarized Raman spectroscopy to quantitatively determine all the in-plane components of the stress tensor in semiconductor structures is presented. Raman experiments were conducted on silicon at different stress states. The results obtained by the proposed method were in good agreement with the given stress state. In addition, the effect of random errors of Raman shifts on the stress component calculation is discussed. In contrast to the conventional analytical solution, our iterative method can significantly reduce the random errors.