Free-carrier generation dynamics induced by ultrashort intense terahertz pulses in silicon | Zendy

А. В. Овчинников | Zendy; O. V. Chefonov | Zendy; M. B. Agranat | Zendy; A. V. Kudryavtsev | Zendy; Е. Д. Мишина | Zendy; A. A. Yurkevich | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Free-carrier generation dynamics induced by ultrashort intense terahertz pulses in silicon

Author(s) -

А. В. Овчинников,

O. V. Chefonov,

M. B. Agranat,

A. V. Kudryavtsev,

Е. Д. Мишина,

A. A. Yurkevich

Publication year - 2021

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.430752

Subject(s) - terahertz radiation , silicon , materials science , wafer , electric field , optics , microsecond , charge carrier , optoelectronics , physics , quantum mechanics

We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the charge carrier concentration over the depth of the silicon sample is formed, which persists for several microseconds. This inhomogeneity is formed due to a sharp increase in the rate of filling the conduction band with free carriers in the subsurface input layer of the silicon wafer, which occurs at a field strength above 15 MV/cm.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research