Open AccessFree-carrier generation dynamics induced by ultrashort intense terahertz pulses in silicon
Author(s) -
А. В. Овчинников,
O. V. Chefonov,
М. Б. Агранат,
A. A. Kudryavtsev,
Е. Д. Мишина,
A. A. Yurkevich
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.430752
Subject(s) - terahertz radiation , silicon , materials science , wafer , electric field , optics , microsecond , charge carrier , optoelectronics , physics , quantum mechanics
We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the charge carrier concentration over the depth of the silicon sample is formed, which persists for several microseconds. This inhomogeneity is formed due to a sharp increase in the rate of filling the conduction band with free carriers in the subsurface input layer of the silicon wafer, which occurs at a field strength above 15 MV/cm.