Open AccessFully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control
Author(s) -
Panpan Li,
Hongjian Li,
Yaxuan Yao,
Haojun Zhang,
Cheyenne Lynsky,
Kai Shek Qwah,
Michael Iza,
James S. Speck,
Shuji Nakamura,
Steven P. DenBaars
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.430694
Subject(s) - light emitting diode , optoelectronics , chemical vapor deposition , materials science , metalorganic vapour phase epitaxy , diode , layer (electronics) , optics , nanotechnology , epitaxy , physics
In this work, we present fully transparent metal organic chemical vapor deposition (MOCVD)-grown InGaN cascaded micro-light-emitting diodes (µLEDs) with independent junction control. The cascaded µLEDs consisted of a blue emitting diode, a tunnel junction (TJ), a green emitting diode, and a TJ, without using any conductive oxide layer. We can control the injection of carriers into blue, green, and blue/green junctions in the same device independently, which show high optical and electrical performance. The forward voltage (V f ) at 20 A/cm 2 for the TJ blue µLEDs and TJ green µLEDs is 4.06 and 3.13 V, respectively. These results demonstrate the efficient TJs and fully activated p-type GaN in the cascaded µLEDs. Such demonstration shows the important application of TJs for the integration of µLEDs with multiple color emissions.