Open Access2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off
Author(s) -
Youliang Zhao,
Jing Liang,
Qinghui Zeng,
Yang Li,
Panyuan Li,
Kaili Fan,
Wenchao Sun,
Jinguang Lv,
Yuxin Qin,
Qiang Wang,
Tao Jin,
Weibiao Wang
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.428482
Subject(s) - materials science , silicon , wafer , substrate (aquarium) , optoelectronics , light emitting diode , optics , oceanography , physics , geology
In this article, 2000 PPI red silicon-based AlGaInP micro-LED arrays were fabricated and investigated. The AlGaInP epilayer was transferred onto the silicon substrate via the In-Ag bonding technique and an epilayer lift-off process. The silicon substrate with a high thermal conductivity could provide satisfactory heat dissipation, leading to micro-LED arrays that had a stable emission spectrum with increasing current density from 20 to 420 A/cm 2 along with a red-shift of the peak position from 624.69 to 627.12 nm ( Δ λ = 2.43 nm). Additionally, increasing the injection current density had little effect on the CIE (x, y) of the micro-LED arrays. Further, the I-V characteristics and light output power of micro-LED arrays with different pixel sizes demonstrated that the AlGaInP red micro-LED array on a silicon substrate had excellent electrical stability and optical output.