Open AccessStress-matched laminated thin film of SiOxNy/SiO2/ SiOxNy for enhanced encapsulation of organic light-emitting devices
Author(s) -
Zheng Chen,
Zhenyu Wang,
Yibin Zhou,
Jian Zhang,
Ze Li,
Chuannan Li,
Ping Chen,
Yu Duan
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.422253
Subject(s) - materials science , oled , chemical vapor deposition , composite material , thin film , optoelectronics , delamination (geology) , atomic layer deposition , internal stress , layer (electronics) , optics , nanotechnology , paleontology , physics , biology , subduction , tectonics
The laminated structure of thin-film encapsulation (TFE) plays an important role for the reliability of organic light-emitting devices (OLEDs). In previous studies of TFE-structures, only the density of the films and the gas-barrier properties were taken into account, while a potential internal stress in the film was largely neglected. Internal stress issues can lead to cracks, warping, and delamination, which affect the performance of the encapsulation layer significantly. Finding ways to eliminate or perhaps utilize potential internal stresses of these films could have substantial benefits for future OLEDs. This study is at the forefront of the stress-related properties of TFE in conjunction with optoelectronic devices. We perform a moisture-barrier test of a fabricated encapsulated laminated structure (Si/50 nm SiO x N y /50nmSiO 2 /900 nm SiO x N y) . The 50 nm SiO x N y buffer-layer was deposited (via chemical vapor deposition) to prevent the delamination and peeling between the SiO 2 film and the OLEDs because of the high stress acting on the SiO 2 layer. The water-vapor transmission rate of the laminated structure is below 5×10 -5 g/m 2 ·d at 38°C and 100% relative humidity. The concept of a laminated TFE-structure has a great application potential for future flexible and bendable organic optoelectronics.