Open AccessSi racetrack optical modulator based on the III–V/Si hybrid MOS capacitor
Author(s) -
Q. Li,
Chao-Ching Ho,
He Tang,
Makoto Okano,
Kazuhiro Ikeda,
Shinichi Takagi,
Mitsuru Takenaka
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.418108
Subject(s) - materials science , resonator , optics , phase shift module , optoelectronics , electro optic modulator , interferometry , phase modulation , modulation (music) , insertion loss , optical modulator , physics , phase noise , acoustics
We have fabricated a Si racetrack optical modulator based on a III-V/Si hybrid metal-oxide-semiconductor (MOS) capacitor. The III-V/Si hybrid MOS optical phase shifter was integrated to a Si racetrack resonator with a coupling length of 200 µm and a coupling gap of 700 nm. The fabricated Si racetrack resonator demonstrated a small VπL of 0.059 Vcm. For 10-dB optical intensity modulation, the Si racetrack resonator showed a 60% smaller driving voltage than a Mach-Zehnder interferometer modulator with the same phase shifter, leading to a better balance between high energy efficiency and large modulation bandwidth.