Open AccessImproved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer
Author(s) -
N Zhang,
Fujun Xu,
Jing Lang,
L B Wang,
J M Wang,
Yong Sun,
B Y Liu,
Nan Xie,
Xuzhou Fang,
Xuelin Yang,
Xiaoning Kang,
X Q Wang,
Zhixin Qin,
Weikun Ge,
Bo Shen
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.416826
Subject(s) - materials science , nanodot , light emitting diode , optoelectronics , electrode , ultraviolet , diode , layer (electronics) , optics , quantum efficiency , sapphire , laser , nanotechnology , chemistry , physics
Enhancement of light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by adopting Ag-nanodots/Al reflective electrodes on a highly transparent complex p-type layer. By thinning the p-GaN to several nm, highly DUV transparent p-type layer is achieved, making it meaningful for the application of reflective electrodes composed of Ag-nanodots and Al film to allow most light emitted upward to be reflected back to the sapphire side. By this approach, the maximum light output power and external quantum efficiency of the DUV-LEDs with optimized Ag nanodots/Al electrodes are severally increased by 52% and 58%, respectively, compared to those with traditional Ni/Au electrodes when the current is below 200 mA.