Open AccessRare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate
Author(s) -
Alban Gassenq,
Etienne Cleyet-Merle,
Hoshang Sahib,
B. Baguenard,
Ali Belarouci,
Régis Orobtchouk,
Frédéric Lerouge,
S. Guy,
A. Péreira
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.416450
Subject(s) - materials science , silicon , optoelectronics , doping , laser , substrate (aquarium) , photonics , etching (microfabrication) , common emitter , hybrid silicon laser , optics , nanotechnology , layer (electronics) , oceanography , physics , geology
Rare earth emitters are promising in integrated optics but require complex integration on silicon. In this work, we have fabricated an Y 2 O 3 :Eu 3+ micro-emitter on SiO 2 on Si substrate without etching. Since pulsed laser deposition produces a high quality layer at room temperature, material can be locally deposited on top of substrates by lift-off processing. After annealing, microstructures exhibit good crystallographic quality with controlled dimensions for light confinement and narrow emission. This works allows envisioning rare-earth doped micro-photonic structures directly integrated on silicon without etching, which opens the way to integration of new functional materials on silicon platform.