Open AccessHybrid dual-gain tunable integrated InP-Si3N4 external cavity laser
Author(s) -
Ruiling Zhao,
Yuyao Guo,
Liangjun Lu,
Muhammad Shemyal Nisar,
Jianping Chen,
Linjie Zhou
Publication year - 2021
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.416398
Subject(s) - laser linewidth , materials science , optics , optical amplifier , optoelectronics , laser , active laser medium , photonic integrated circuit , net gain , photonics , laser power scaling , semiconductor laser theory , injection seeder , gain , amplifier , semiconductor , physics , cmos
We present a hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability. Two parallel reflective semiconductor optical amplifier gain channels are combined by a Y-branch in the Si 3 N 4 photonic circuit to increase the optical gain. A Vernier ring filter is integrated in the Si 3 N 4 photonic circuit to select a single longitudinal mode and meanwhile reduce the laser linewidth. The side-mode suppression ratio is ∼67 dB with a pump current of 75 mA. The linewidth of the unpackaged laser is 6.6 kHz under on-chip output power of 23.5 mW. The dual-gain operation of the laser gives higher output power and narrower linewidth compared to the single gain operation. It is promising for applications in optical communications and light detection and ranging systems.