Open AccessInGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm
Author(s) -
Paulo Hisao Moriya,
Riccardo Casula,
George A. Chappell,
Daniele C. Parrotta,
Sanna Ranta,
Hermann Kahle,
Mircea Guina,
Jennifer E. Hastie
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.416210
Subject(s) - laser linewidth , materials science , optics , optoelectronics , laser , relative intensity noise , semiconductor laser theory , diode , resonator , physics
We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM 00 ) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.