Open AccessEnhanced room-temperature electroluminescence from a germanium waveguide on a silicon-on-insulator diode with a silicon nitride stressor
Author(s) -
Kazuki Tani,
Katsuya Oda,
Momoko Deura,
T. Ido
Publication year - 2021
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.415230
Subject(s) - materials science , optoelectronics , electroluminescence , silicon on insulator , silicon , silicon nitride , diode , germanium , band gap , fabrication , nanotechnology , layer (electronics) , medicine , alternative medicine , pathology
Germanium (Ge) is an attractive material for monolithic light sources on a silicon chip. Introduction of tensile strain using a silicon nitride (SiN x ) stressor is a promising means for Ge-based light sources due to the enhancement of direct band gap recombination. We propose a device structure that enables current injection from a silicon-on-insulator (SOI) diode to a Ge waveguide with a SiN x stressor formed by a simple fabrication process. Direct-band-gap electroluminescence and direct-band-gap shrinkage due to the applied SiN x stressor was confirmed. Intensity of electroluminescence from the Ge waveguide with the SiN x stressor was about three times higher than that corresponding to the device without the SiN x stressor.