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Theoretical design of a reconfigurable broadband integrated metamaterial terahertz device
Author(s) -
Hui Li,
Wenhui Xu,
Qi Cui,
Yan Wang,
Yu Jiang
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.414961
Subject(s) - terahertz radiation , materials science , optics , optoelectronics , metamaterial , transmittance , absorptance , wideband , fermi energy , physics , quantum mechanics , electron , reflectivity
An actively reconfigurable broadband terahertz (THz) metamaterial functional device based on the phase-change material vanadium dioxide (VO 2 ) and two-dimensional graphene material is theoretically proposed and demonstrated. The device has excellent tolerance under oblique incidence. When the VO 2 is in the metallic state, and the Fermi energy of graphene is fixed at 0.1 eV, the designed device acts as a broadband THz absorber in the transverse magnetic (TM) polarization mode. The absorptance bandwidth exceeds 0.55 THz with a complete absorption intensity of more than 90%. In this state, the absorber operates as a broadband modulator with the total modulation depth exceeding 91.5% as the continually decreased conductivity of VO 2 from 2 S/m to 10 S/m. In the transverse electric (TE) polarization process, the structure behaves as a dual-band absorber with two perfect absorption peaks. When the conductivity of VO 2 is changed, the tunable absorber can also be regarded as an absorptance modulator, with a maximum modulation intensity of 92.1%. Alternatively, when VO 2 behaves as an insulator at room temperature in the TE polarization mode, a strong broadband electromagnetically induced transparency (EIT) window is obtained, with a bandwidth exceeding 0.42 THz in the transmittance spectrum. By varying the Fermi energy of graphene from 0 to 0.9 eV, the EIT-like window or broadband transmission spectrum (in TM mode) can be switched. The results indicate that the device can also be operated as a modulator in the transmission mode. The impedance matching theory is used, and electric field distributions are analyzed to quantify the physical mechanism. An advantage of the manipulation of the polarization angle is that the modulation performance of the proposed multi-functional THz device can be regulated after fabricated.

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