Open AccessBack-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers
Author(s) -
Torrey Thiessen,
Sylvie Menezo,
Christophe Jany,
Jason C. C. Mak,
Joyce K. S. Poon
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.412839
Subject(s) - materials science , laser , optics , silicon , silicon on insulator , optoelectronics , fabrication , semiconductor laser theory , hybrid silicon laser , semiconductor , physics , medicine , alternative medicine , pathology
We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB.