Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers | Zendy

Torrey Thiessen | Zendy; Sylvie Menezo | Zendy; Christophe Jany | Zendy; Jason C. C. Mak | Zendy; Joyce K. S. Poon | Zendy

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Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers

Author(s) -

Torrey Thiessen,

Sylvie Menezo,

Christophe Jany,

Jason C. C. Mak,

Joyce K. S. Poon

Publication year - 2020

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.412839

Subject(s) - materials science , laser , optics , silicon , silicon on insulator , optoelectronics , fabrication , semiconductor laser theory , hybrid silicon laser , semiconductor , physics , medicine , alternative medicine , pathology

We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB.

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