Open AccessElectroluminescent Y3Al5O12 nanofilms fabricated by atomic layer deposition on silicon: using Yb as the luminescent dopant and crystallization impetus
Author(s) -
Jingjun Xu,
Jianzhao Liu,
Yang Li,
Junqing Liu,
Yang Yang
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.412776
Subject(s) - materials science , luminescence , dopant , electroluminescence , doping , crystallization , optoelectronics , silicon , crystallinity , atomic layer deposition , thin film , nanotechnology , analytical chemistry (journal) , layer (electronics) , chemical engineering , composite material , engineering , chemistry , chromatography
Silicon-based Yb-doped Y 3 Al 5 O 12 garnet nanofilms are fabricated by atomic layer deposition, which are polycrystalline after annealing at 1150 °C. The sub-nanometer compositional regulation and the Yb 2 O 3 cladding layers, which also work as the luminescent dopants, are critical for the crystallization. Characteristic Yb 3+ luminescence at 1030 nm and 970 nm is identied under electrical injection, exhibiting the external quantum efficiency of 0.65% and the fluorescence lifetime of 80-200 µs. The doped Yb 3+ are impact-excited by hot electrons stemming from Fowler-Nordheim tunneling mechanism within the Y 3 Al 5 O 12 matrix, with the excitation cross section of 0.7×10 -15 to 6.4×10 -15 cm 2 . This work certifies the manipulation of multi-oxide nanofilms with designed composition and crystallinity, revealing the possibility of developing Si-based optoelectronic devices from crystalline garnet films.