Open AccessSingle longitudinal-mode passively Q-switched 1537 nm Er:Yb:Lu2Si2O7 pulse microchip laser
Author(s) -
Yujin Chen,
Jianhua Huang,
Yanfu Lin,
Xinghong Gong,
Zhixun Luo,
Yidong Huang
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.411590
Subject(s) - materials science , optics , laser , laser beam quality , q switching , pulse duration , saturable absorption , beam (structure) , m squared , pulse repetition frequency , longitudinal mode , pulse width modulation , fiber laser , power (physics) , laser beams , physics , telecommunications , radar , quantum mechanics , computer science
A single longitudinal-mode passively Q-switched 1537 nm pulse microchip laser was realized in an Er:Yb:Lu 2 Si 2 O 7 crystal. The effects of the pump beam diameter and output mirror transmission on pulse characteristics of the Er:Yb:Lu 2 Si 2 O 7 microchip laser were investigated, when a Co 2+ :MgAl 2 O 4 saturable absorber with an initial transmission of 95% was used. At an absorbed pump power of 3.4 W, a 1537 nm single-longitudinal-mode pulse laser with energy of 25.8 µJ, repetition frequency of 0.89 kHz, duration of 4.3 ns, and peak output power of 6.0 kW was obtained, when the pump beam diameter and output mirror transmission were 420 µm and 3.0%, respectively. The beam quality factor of output laser with TEM 00 mode was less than 1.3.