Open AccessUltra-low-power nonvolatile integrated photonic switches and modulators based on nanogap-enhanced phase-change waveguides
Author(s) -
Jieying Zhang,
Jiajiu Zheng,
Peipeng Xu,
Yanqun Wang,
Arka Majumdar
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.411254
Subject(s) - extinction ratio , materials science , optical switch , waveguide , optics , optoelectronics , photonics , insertion loss , phase modulation , attenuation , optical power , power dividers and directional couplers , optical modulator , wavelength , physics , laser , phase noise
We propose a nanogap-enhanced phase-change waveguide with silicon PIN heaters. Thanks to the enhanced light-matter interaction in the nanogap, the proposed structure exhibits strong attenuation (Δα = ∼35 dB/µm) and optical phase (Δn eff = ∼1.2) modulation at λ = 1550 nm when achieving complete phase transitions. We further investigate two active optical devices based on the proposed waveguide, including an electro-absorption modulator and a 1 × 2 directional-coupler optical switch. Finite-difference time-domain simulation of the proposed modulator shows a high extinction ratio of ∼17 dB at 1550 nm with an active segment of volume only ∼0.004λ3. By exploiting a directional coupler design, we present a 1 × 2 optical switch with an insertion loss of < 4 dB and a compact coupling length of ∼ 15 µm while maintaining small crosstalk less than -7.2 dB over an optical bandwidth of 50 nm. Thermal analysis shows that a 10 V pulse of 30 ns (1×1 modulator) and 55 ns (1×2 switch) in duration is required to raise the GST temperature of the phase-change waveguide above the melting temperature to induce the amorphization; however, the complete crystallization occurs by applying a 5 V pulse of 180 ns (1×1 modulator) and a 6 V pulse of 200 ns (1×2 switch), respectively.