Open AccessEnhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping
Author(s) -
Jianxun Liu,
Haoran Qie,
Qian Sun,
Meixin Feng,
Jin Wang,
Xiaofeng Sun,
Xing Sheng,
Masao Ikeda,
Hui Yang
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.410004
Subject(s) - auger effect , materials science , doping , optoelectronics , quantum well , diode , band diagram , carrier lifetime , laser , spontaneous emission , absorption (acoustics) , quantum dot , photon , light emitting diode , semiconductor laser theory , optics , auger , physics , silicon , band gap , atomic physics , composite material
Very limited 1-3 pairs of quantum-wells (QWs) are preferred for GaN-based laser diodes (LDs), which require more careful engineering of the carrier transport than LEDs. In this work, the first-barrier doping level of QWs is found to significantly affect the carrier confinement and distribution for GaN-based LDs. The first-barrier doping exceeding 2×10 18 cm -3 will make the bottom QW return to the parasitic state, yielding unexpected photons absorption and even Auger recombination. The underlying physical mechanism is discussed in terms of the calculated energy-band diagram, carrier confinement, and distribution. And all the experimental findings are consistent with the physical model.