Open AccessFabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances
Author(s) -
Dimosthenis Toliopoulos,
Michel Khoury,
Mohammed Bouabdellaoui,
Nicoletta Granchi,
Jean-Benoît Claude,
Abdennacer Benali,
Isabelle Berbézier,
D. Hannani,
A. Ronda,
Jérôme Wenger,
Monica Bollani,
Massimo Gurioli,
S. Sanguinetti,
Francesca Intonti,
Marco Abbarchi
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.409001
Subject(s) - materials science , dewetting , optics , resonator , wafer , silicon , free spectral range , optoelectronics , dielectric , silicon on insulator , electron beam lithography , scattering , thin film , layer (electronics) , nanotechnology , resist , physics
We use low-resolution optical lithography joined with solid state dewetting of crystalline, ultra-thin silicon on insulator (c-UT-SOI) to form monocrystalline, atomically smooth, silicon-based Mie resonators in well-controlled large periodic arrays. The dewetted islands have a typical size in the 100 nm range, about one order of magnitude smaller than the etching resolution. Exploiting a 2 µm thick SiO 2 layer separating the islands and the underlying bulk silicon wafer, we combine the resonant modes of the antennas with the etalon effect. This approach sets the resonance spectral position and improves the structural colorization and the contrast between scattering maxima and minima of individual resonant antennas. Our results demonstrate that templated dewetting enables the formation of defect-free, faceted islands that are much smaller than the nominal etching resolution and that an appropriate engineering of the substrate improves their scattering properties. These results are relevant to applications in spectral filtering, structural color and beam steering with all-dielectric photonic devices.