
Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers
Author(s) -
Bahawal Haq,
Javad Rahimi Vaskasi,
Jing Zhang,
Agnieszka Gocalinska,
E. Pelucchi,
Brian Corbett,
Günther Roelkens
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.404847
Subject(s) - optics , materials science , silicon , laser , optoelectronics , semiconductor laser theory , physics
We report on single-mode C-band distributed feedback lasers fabricated through micro-transfer-printing of semiconductor optical amplifier coupons fabricated on a InP source wafer onto a silicon-on-insulator photonic circuit. The coupons are micro-transfer printed on quarter-wave shifted gratings defined in SiN deposited on the silicon waveguide. Alignment-tolerant adiabatic tapers are used to efficiently couple light from the hybrid III-V/Si waveguide to the Si waveguide circuit. 80 mA threshold current and a maximum single-sided waveguide-coupled output power above 6.9 mW is obtained at 20 °C. Single mode operation around 1558 nm with > 33 dB side mode suppression ratio is demonstrated. Micro-transfer printing-based heterogeneous integration is promising for the wafer-level integration of advanced laser sources on complex silicon photonic integrated circuit platforms without changing the foundry process flow.