Open AccessThree-dimensional electrochemical etching by grid ditching for multi-wavelength visible-light emission on porous silicon
Author(s) -
Jia-Chuan Lin,
Yu Chen Huang
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.402906
Subject(s) - materials science , porous silicon , wavelength , photoresist , visible spectrum , etching (microfabrication) , optics , optoelectronics , silicon , ultraviolet , porosity , photolithography , nanotechnology , layer (electronics) , composite material , physics
A new approach of three-dimensional electro-chemical etchings both in vertical and lateral current directions on grid ditched Si pn-structures is originally proposed. Lateral etchings on the different ditched zones cause different porosities on porous Si, which emit visible lights of different wavelengths under ultraviolet light stimulation. Therefore, a single Si-based chip is capable of emitting visible light with tunable and multiple wavelengths simultaneously by this new approach. Moreover, the etching conditions on porous Si films and their related wavelengths can be fine-tuned by area sizes. Compared with the conventional method, the new approach provides a new option for multi-wavelength chip design with a precise patterning for porous Si without any mask and photoresist.