Open AccessTemperature dependence of the Auger recombination coefficient in InGaN/GaN multiple-quantum-well light-emitting diodes
Author(s) -
Han-Youl Ryu,
Guen-Hwan Ryu,
Chibuzo Onwukaeme,
Byongjin Ma
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.402831
Subject(s) - auger effect , materials science , quantum efficiency , diode , light emitting diode , auger , temperature coefficient , indium gallium nitride , optoelectronics , spontaneous emission , optics , quantum well , atomic physics , physics , laser , composite material
This study investigated the temperature dependence of the Auger recombination coefficient (C) in an InGaN/GaN blue multiple-quantum-well (MQW) light-emitting diode structure at temperatures between 20 and 100°C. The temperature dependence of C was determined by fitting the measured external quantum efficiency (EQE) data using an analytical model or numerical simulation. In the analytical model, the carrier density in InGaN MQWs was assumed to be constant and independent of temperature. In contrast, the inhomogeneous carrier distribution in MQWs and its temperature-dependent redistribution were included in the numerical simulation. When the analytical model was employed to fit the EQE curve, C decreased with increasing temperature. On the other hand, when the numerical simulation was employed, C increased steadily by ∼31% as the temperature was increased from 20 to 100°C. We found that the temperature-dependent carrier distribution is important to consider when determining the temperature dependence of the Auger recombination coefficient in InGaN MQW structures.