Open AccessInAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration
Author(s) -
Wen-Qi Wei,
Qi Feng,
Jingjing Guo,
Ming-Chen Guo,
Jianhuan Wang,
Zi-Hao Wang,
Ting Wang,
Jianjun Zhang
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.402174
Subject(s) - silicon on insulator , optoelectronics , materials science , lasing threshold , laser , photonics , silicon , photonic integrated circuit , silicon photonics , fabrication , epitaxy , substrate (aquarium) , quantum dot , quantum dot laser , optics , semiconductor laser theory , nanotechnology , semiconductor , physics , wavelength , medicine , oceanography , alternative medicine , pathology , layer (electronics) , geology
Monolithic integration of III-V laser sources on standard silicon-on-insulator (SOI) substrate has been recognized as an enabling technology for realizing Si-based photonic integration circuits (PICs). The Si-based ridge lasers employing III-V quantum dot (QD) materials are gaining significant momentum as it allows massive-scalable, streamlined fabrication of Si photonic integrated chips to be made cost effectively. Here, we present the successful fabrication of InAs/GaAs QD ridge lasers monolithically grown on {111}-faceted SOI hollow substrates. The as-cleaved Fabry-Perot (FP) narrow ridge laser is achieved with a relatively low threshold current of 50 mA at room temperature under pulse current operation. The maximum working temperature achieved is up to 80 oC. The promising lasing characteristics of such SOI-based InAs/GaAs QD ridge lasers with low threshold current and small footprint provide a viable route towards large-scale, low-cost integration of laser sources on SOI platform for silicon photonic integration purpose.