Open AccessViolet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length
Author(s) -
Joonho Back,
Matthew S. Wong,
Jared Kearns,
Steven P. DenBaars,
C. Weisbuch,
Shuji Nakamura
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.401640
Subject(s) - materials science , light emitting diode , optoelectronics , chemical vapor deposition , metalorganic vapour phase epitaxy , diode , quantum efficiency , wavelength , optics , epitaxy , substrate (aquarium) , physics , nanotechnology , oceanography , layer (electronics) , geology
Violet semipolar (20-2-1) InGaN microcavity light-emitting diodes (MC-LED) with a 200 nm ultra-short cavity length were demonstrated. The emission wavelength was 419 nm with a spectrum width of 20 nm. The external quantum efficiency (EQE) of MC-LED was constant at 0.8% for a forward current from 0.5 to 2 mA with the emitting area of 30×30 µm 2 . With increasing forward current, the peak wavelength and spectrum width of the emission showed almost no changes. For epitaxial growth, metal-organic chemical vapor deposition (MOCVD) was used. Substrate removal and tunnel-junction with an Ag-based electrode made possible the fabrication of the ultra-short 200 nm thick cavity MC-LED. This is more than a factor of 2 improvement compared to previous MC-LEDs of 450 nm cavity thickness sustaining 5 modes.