Open AccessUltrawideband terahertz absorber with a graphene-loaded dielectric hemi-ellipsoid
Author(s) -
Renbin Zhong,
Yang Long,
Zekun Liang,
Zhenhua Wu,
Yiqin Wang,
Anchen Ma,
Zheng Fang,
Shenggang Liu
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.401069
Subject(s) - graphene , terahertz radiation , materials science , optics , optoelectronics , dielectric , absorption (acoustics) , nanotechnology , physics , composite material
We herein present a high-performance ultrawideband terahertz absorber with a silicon hemi-ellipsoid (SHE) on a monolayer graphene that is separated by a dielectric spacer from a bottom metal reflector. The constitution of the absorber, which includes dielectric-mode structures and unstructured monolayer graphene, can minimize undesired optical losses in metals and avoid graphene processing. The absorber achieved an ultrawide absorption bandwidth from 2 THz to more than 10 THz with an average absorption of 95.72%, and the relative bandwidth is 133%. The excellent absorption properties are owing to the presence of graphene and the shape morphing of the SHE, in which multiple discrete graphene plasmon resonances (GPRs) and continuous multimode Fabry-Perot resonances (FPRs) can be excited. By coupling the GPRs and FPRs, the absorption spectrum is extended and smoothed to realize an ultrawideband absorber. The incident angular insensitivity within 50° of the absorber is discussed. The results will shed light on the better performance of terahertz trapping, imaging, communication and detection.