High performance laser diode bars with aluminum-free active regions | Zendy

M. Jansen | Zendy; P. Bournes | Zendy; P. J. Corvini | Zendy; Fang Fang | Zendy; M. Finander | Zendy; Michael Hmelar | Zendy; T. Johnston | Zendy; C. Jordan | Zendy; R.F. Nabiev | Zendy; J. L. Nightingale | Zendy; Michael Widman | Zendy; H. Asonen | Zendy; Jaan Aarik | Zendy; A. Salokatve | Zendy; J. Näppi | Zendy; K. Rakennus | Zendy

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High performance laser diode bars with aluminum-free active regions

Author(s) -

M. Jansen,

P. Bournes,

P. J. Corvini,

Fang Fang,

M. Finander,

Michael Hmelar,

T. Johnston,

C. Jordan,

R.F. Nabiev,

J. L. Nightingale,

Michael Widman,

H. Asonen,

Jaan Aarik,

A. Salokatve,

J. Näppi,

K. Rakennus

Publication year - 1999

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.4.000003

Subject(s) - materials science , optics , diode , laser , semiconductor laser theory , aluminium , optoelectronics , beam (structure) , active layer , layer (electronics) , composite material , physics , thin film transistor

We present operating and lifetest data on 795 and 808 nm bars with aluminum-free active regions. Conductively cooled bars operate reliably at CW power outputs of 40 W, and have high efficiency, low beam divergence, and narrow spectra. Record CW powers of 115 W CW are demonstrated at 795 nm for 30% fill-factor bars mounted on microchannel coolers. We also review QCW performance and lifetime for higher fill-factor bars processed on identical epitaxial material.

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