Open AccessHigh performance laser diode bars with aluminum-free active regions
Author(s) -
M. Jansen,
P. Bournes,
P. J. Corvini,
Fang Fang,
M. Finander,
Michael Hmelar,
Thomas F. Johnston,
C. Jordan,
R.F. Nabiev,
J. L. Nightingale,
Michael Widman,
H. Asonen,
Jaan Aarik,
A. Salokatve,
J. Näppi,
K. Rakennus
Publication year - 1999
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.4.000003
Subject(s) - materials science , optics , diode , laser , semiconductor laser theory , aluminium , optoelectronics , beam (structure) , active layer , layer (electronics) , composite material , physics , thin film transistor
We present operating and lifetest data on 795 and 808 nm bars with aluminum-free active regions. Conductively cooled bars operate reliably at CW power outputs of 40 W, and have high efficiency, low beam divergence, and narrow spectra. Record CW powers of 115 W CW are demonstrated at 795 nm for 30% fill-factor bars mounted on microchannel coolers. We also review QCW performance and lifetime for higher fill-factor bars processed on identical epitaxial material.