Open AccessQuantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence
Author(s) -
Zhaoying Chen,
Yuxuan Zhang,
Hongping Zhao
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.399986
Subject(s) - cathodoluminescence , impurity , metalorganic vapour phase epitaxy , materials science , chemical vapor deposition , electron beam induced current , optoelectronics , analytical chemistry (journal) , gallium nitride , optics , luminescence , silicon , epitaxy , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , chromatography
Cathodoluminescence (CL) is used as a quantitative characterization technique to probe impurities at the metal-organic chemical vapor deposition (MOCVD) grown GaN-on-GaN homoepitaxial interfaces. CL intensity contrast shows a strong correlation with the interfacial impurity concentrations. Based on the analysis of recombination mechanisms of electron beam induced non-equilibrium carriers, an analytical model is proposed to quantitatively determine the impurity concentrations from CL intensity. The extracted interfacial impurity concentrations from the analytical model show a good agreement with the compensation levels obtained from capacitance-voltage measurement, signifying the potential of CL for probing the quantitative impurity levels in GaN-on-GaN structures. This approach can also be extended to be applied in other material systems.