Open AccessComputational proximity lithography with extreme ultraviolet radiation
Author(s) -
Valerie Deuter,
Maciej Grochowicz,
Sascha Brose,
Jan Biller,
Serhiy Danylyuk,
Thomas Taubner,
Agnieszka Siemion,
Detlev Grützmacher,
Larissa Juschkin
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.398805
Subject(s) - extreme ultraviolet lithography , extreme ultraviolet , optics , lithography , holography , undulator , resist , synchrotron radiation , electron beam lithography , achromatic lens , materials science , x ray lithography , radiation , ptychography , optoelectronics , physics , diffraction , laser , nanotechnology , layer (electronics)
The potential of extreme ultraviolet (EUV) computational proximity lithography for fabrication of arbitrary nanoscale patterns is investigated. We propose to use a holographic mask (attenuating phase shifting mask) consisting of structures of two phase levels. This approach allows printing of arbitrary, non-periodic structures without using high-resolution imaging optics. The holographic mask is designed for a wavelength of 13.5 nm with a conventional high-resolution electron beam resist as the phase shifting medium (pixel size 50 nm). The imaging performance is evaluated by using EUV radiation with different degrees of spatial coherence. Therefore exposures on identical masks are carried out with both undulator radiation at a synchrotron facility and plasma-based radiation at a laboratory setup.