Open AccessTransfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications
Author(s) -
Jeroen Goyvaerts,
Sulakshna Kumari,
Sarah Uvin,
Jing Zhang,
Roel Baets,
Agnieszka Gocalinska,
E. Pelucchi,
Brian Corbett,
Günther Roelkens
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.395796
Subject(s) - photodiode , arrayed waveguide grating , materials science , optoelectronics , optics , grating , waveguide , detector , silicon nitride , responsivity , quantum efficiency , spectrometer , transfer printing , silicon , diffraction grating , photodetector , physics , wavelength division multiplexing , wavelength , composite material
We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.