Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications | Zendy

Jeroen Goyvaerts | Zendy; Sulakshna Kumari | Zendy; Sarah Uvin | Zendy; Jing Zhang | Zendy; Roel Baets | Zendy; Agnieszka Gocalińska | Zendy; E. Pelucchi | Zendy; Brian Corbett | Zendy; Günther Roelkens | Zendy

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Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Author(s) -

Jeroen Goyvaerts,

Sulakshna Kumari,

Sarah Uvin,

Jing Zhang,

Roel Baets,

Agnieszka Gocalińska,

E. Pelucchi,

Brian Corbett,

Günther Roelkens

Publication year - 2020

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.395796

Subject(s) - photodiode , arrayed waveguide grating , materials science , optoelectronics , optics , grating , waveguide , detector , silicon nitride , responsivity , quantum efficiency , spectrometer , transfer printing , silicon , diffraction grating , photodetector , physics , wavelength division multiplexing , wavelength , composite material

We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

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