Open AccessHigh operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices
Author(s) -
Gongrong Deng,
Dongqiong Chen,
Sui Yang,
Chao-Wei Yang,
Jun Yuan,
Wenyun Yang,
Yiyun Zhang
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.395770
Subject(s) - optics , materials science , optoelectronics , operating temperature , photodetector , specific detectivity , infrared , dark current , mercury cadmium telluride , indium gallium arsenide , quantum efficiency , cardinal point , wavelength , photodiode , cutoff frequency , gallium arsenide , physics , thermodynamics
Improving the operation temperature of the focal plane array (FPA) imagers is critical in meeting the demands to reduce the size, weight, and power (SWaP) for mid-infrared detection systems. In this work, we report the demonstration of a 15 µm-pitch 640×512 middle-format pBn FPA device with a 50% cutoff wavelength of 4.8 µm based on short period of InAs/InAsSb-based "Ga-free" type-II strained-layer superlattices, which achieves a high operating temperature (HOT) reaching 185 K. The pBn FPA exhibits a mean noise equivalent differential temperature (NETD) of 39.5 mK and an operability of 99.6% by using f/2.0 optics for a 300 K background at 150 K. The mean quantum efficiency is 57.6% without antireflection coating and dark current density is 5.39×10 -5 A/cm 2 at an operation bias of -400 mV, by which the mean specific detectivity(D*) is calculated as high as 4.43×10 11 cm.Hz ½ /W.