Open AccessFar-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS2 heterostructures
Author(s) -
V. Ryzhii,
M. Ryzhii,
P. P. Maltsev,
Valeriy E. Karasik,
Vladimir Mitin,
Michael Shur,
T. Otsuji
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.394662
Subject(s) - terahertz radiation , graphene , heterojunction , optoelectronics , materials science , infrared , diode , electron , photon , optics , layer (electronics) , physics , nanotechnology , quantum mechanics
We propose the far-infrared and terahertz emitting diodes (FIR-EDs and THz-EDs) based on the graphene-layer/black phosphorus (GL/b-P) and graphene-layer/MoS 2 (GL/MoS 2 ) heterostructures with the lateral hole and vertical electron injection and develop their device models. In these EDs, the GL serves as an active region emitting the FIR and THz photons. Depending on the material of the electron injector, the carriers in the GL can be either cooled or heated dictated by the interplay of the vertical electron injection and optical phonon recombination. The proposed EDs based on GL/b-P heterostructures can be efficient sources of the FIP and THz radiation operating at room temperature.