Open AccessAbove 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes
Author(s) -
Anna Kafar,
Ryota Ishii,
Krzysztof Gibasiewicz,
Yoshinobu Matsuda,
Szymon Stańczyk,
Dario Schiavon,
S. Grzanka,
Mikiya Tano,
Atsushi Sakaki,
T. Suski,
P. Perlin,
Mitsuru Funato,
Yoichi Kawakami
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.394580
Subject(s) - materials science , misorientation , optoelectronics , light emitting diode , quantum well , epitaxy , wavelength , optics , indium nitride , indium gallium nitride , diode , indium , substrate (aquarium) , emission intensity , superluminescent diode , gallium nitride , blueshift , photoluminescence , laser , physics , nanotechnology , microstructure , oceanography , layer (electronics) , geology , grain boundary , metallurgy
We report a thorough study of InGaN quantum wells spatially modified by varying the local misorientation of the GaN substrate prior to the epitaxial growth of the structure. More than 25 nm shift of emission wavelength was obtained, which is attributed to indium content changes in the quantum wells. Such an active region is promising for broadening of the emission spectrum of (In,Al,Ga)N superluminescent diodes. We observed that the light intensity changes with misorientation, being stable around 0.5° to 2° and decreasing above 2°. This relation can be used as a base for future device designing.