Open AccessConfinement effect and low-defect density-induced long lifetime Er silicate nanowire embedded in silicon oxide film
Author(s) -
Hao Shen,
Yuhan Gao,
Deren Yang,
Dongsheng Li
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.391094
Subject(s) - materials science , nanowire , passivation , silicon , annealing (glass) , oxide , luminescence , silicate , photoluminescence , carrier lifetime , ion , optoelectronics , nanotechnology , chemical engineering , composite material , chemistry , metallurgy , organic chemistry , layer (electronics) , engineering
In this study, we have developed a reduced Er-Er interaction strategy for pursuing long lifetime and high efficiency luminescence in Er compounds with higher Er concentration. Annealing temperature and atmosphere dependence of the optical properties from Er silicate nanowires embedded in silicon oxide films have been investigated. The record long lifetime α-Er 2 Si 2 O 7 of 844 µs is achieved through simultaneously reducing defect density and Er-Er interaction. The low-defect density in the α-Er 2 Si 2 O 7 nanowires is mainly attributed to following aspects: no hydroxyl groups contamination, effective surface passivation and saturation of oxygen vacancies. The interaction of Er-Er ions is confined by the alteration of phonon density of states effects in the α-Er 2 Si 2 O 7 nanowires. More signicantly, the up-conversion emissions in the α-Er 2 Si 2 O 7 nanowires also reduce effectively because of the nanoconfinement effect.