Open AccessAlGaN-based Schottky barrier deep ultraviolet photodetector grown on Si substrate
Author(s) -
Fangzhou Liang,
Meixin Feng,
Yinbo Huang,
Xiaofeng Sun,
Xiaoning Zhan,
Jianxun Liu,
Qian Sun,
Rongxin Wang,
Xiaotian Ge,
Jiqiang Ning,
Hui Yang
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.389767
Subject(s) - materials science , photodetector , responsivity , ultraviolet , optoelectronics , schottky barrier , annealing (glass) , optics , composite material , physics , diode
This letter reports the influence of material quality and device processing on the performance of AlGaN-based Schottky barrier deep ultraviolet photodetectors grown on Si substrates. The thermal annealing can significantly improve Schottky barrier height and wet chemical etching can effectively remove etching damage. Meanwhile, the decrease of threading dislocation density and the pit size, especially the later, can substantially suppress reverse leakage. As a result, the reverse leakage current density of the as-fabricated deep UV photodetector was reduced down to 3×10 -8 A/cm 2 . Furthermore, the responsivity of the deep UV photodetectors was greatly improved by reducing the point defect concentration.