Open AccessHeterogeneous photodiodes on silicon nitride waveguides
Author(s) -
Qianhuan Yu,
Jinliang Gao,
Nan Ye,
Baiheng Chen,
Keye Sun,
Ling Xie,
Kartik Srinivasan,
Michael Zervas,
Gabrielė Navickaitė,
Michael Geiselmann,
Andreas Beling
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.387939
Subject(s) - photodiode , materials science , photodetector , optoelectronics , bandwidth (computing) , silicon nitride , photonics , dark current , optics , silicon , gigabit , silicon photonics , physics , telecommunications , computer science
Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si 3 N 4 ) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si 3 N 4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.