Open AccessDefect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy
Author(s) -
Ningtao Zhang,
Andrew Jones,
Zhuo Deng,
Baile Chen
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.387784
Subject(s) - apds , materials science , avalanche photodiode , photodetector , spectroscopy , optoelectronics , noise (video) , optics , molecular beam epitaxy , characterization (materials science) , alloy , infrasound , fabrication , epitaxy , nanotechnology , detector , physics , computer science , acoustics , medicine , alternative medicine , composite material , pathology , layer (electronics) , quantum mechanics , artificial intelligence , image (mathematics)
An avalanche photodetector (APD) based on the Al x In 1-x As y Sb 1-y digital alloy materials system has recently attracted extensive attention due to its extremely low excess noise. Device defects are a critical factor limiting the performance of APDs. In this work, we use low frequency noise spectroscopy (LFNS) to characterize the property of the defects in Al x In 1-x As y Sb 1-y APDs grown by molecular beam epitaxy (MBE) using the digital alloy technique. Based on low frequency noise spectroscopy results carried out before and after device oxidation, two surface defects and one bulk defect have been identified, which could provide useful information for the future optimization the material growth and device fabrication processes.