Defect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy | Zendy

Ningtao Zhang | Zendy; Andrew H. Jones | Zendy; Zhuo Deng | Zendy; Baile Chen | Zendy

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Defect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy

Author(s) -

Ningtao Zhang,

Andrew H. Jones,

Zhuo Deng,

Baile Chen

Publication year - 2020

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.387784

Subject(s) - optics , photodetector , spectroscopy , materials science , characterization (materials science) , noise (video) , avalanche photodiode , optoelectronics , infrasound , detector , physics , acoustics , computer science , quantum mechanics , artificial intelligence , image (mathematics)

An avalanche photodetector (APD) based on the Al x In 1-x As y Sb 1-y digital alloy materials system has recently attracted extensive attention due to its extremely low excess noise. Device defects are a critical factor limiting the performance of APDs. In this work, we use low frequency noise spectroscopy (LFNS) to characterize the property of the defects in Al x In 1-x As y Sb 1-y APDs grown by molecular beam epitaxy (MBE) using the digital alloy technique. Based on low frequency noise spectroscopy results carried out before and after device oxidation, two surface defects and one bulk defect have been identified, which could provide useful information for the future optimization the material growth and device fabrication processes.

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