UV light-emitting diodes grown on GaN templates with selective-area Si implantation

This study demonstrates that selective-area Si implantation performed on the GaN templates instead of conventional dielectric layers, such as SiO 2 or SiN x , serves as the mask layer for the epitaxial lateral overgrowth (ELOG) process. Although the substantial mask layer is absent on the templates, selective growth initially occurs on the implantation-free area and then evolves a lateral overgrowth on the Si-implanted area during the regrowth process. This selective growth is attributed to that the crystal structure of the Si-implanted area subjected to the high doses of ion bombardment produces an amorphous surface layer, thereby leading to a lattice mismatch to the regrown GaN layer. Microstructural analyses reveal that the density of the threading dislocations above the Si-implanted regions is markedly lower than the GaN layer in the implantation-free regions. Consequentially, UV LEDs fabricated on the Si-implanted GaN templates exhibit relatively higher light output and lower leakage current compared with those of LEDs grown on ELOG-free GaN templates.