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On the origin for the hole confinement into apertures for GaN-based VCSELs with buried dielectric insulators
Author(s) -
Sheng Hang,
Yonghui Zhang,
Yan Gao,
Xuejiao Qiu,
Jianquan Kou,
Kangkai Tian,
Zihui Zhang
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.385787
Subject(s) - materials science , insulator (electricity) , dielectric , optoelectronics , lasing threshold , optics , physics , wavelength

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