Open AccessHigh-performance β-Ga2O3 thickness dependent solar blind photodetector
Author(s) -
Xiaoyu Zhang,
Ling Wang,
Xudong Wang,
Yan Chen,
Qianqian Shao,
Guangjian Wu,
Ding Wang,
Tao Lin,
Hong Shen,
Jianlu Wang,
Meng Xun,
Junhao Chu
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.385470
Subject(s) - materials science , photocurrent , photodetector , optoelectronics , dark current , optics , band gap , gallium , ultraviolet , electrode , chemistry , physics , metallurgy
Gallium oxide (Ga 2 O 3 ) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga 2 O 3 films by pulsed laser deposition. β-Ga 2 O 3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga 2 O 3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga 2 O 3 in the field of UV detection.