Open AccessLow power consumption light emitting device containing TiO2:Er3+ thin film prepared by sol-gel method
Author(s) -
Yangyi Zhang,
Jiaming Chen,
Guozhi Hou,
Dongke Li,
Yangqing Wu,
Jun Xu,
Ling Xu,
Kunji Chen
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.384810
Subject(s) - photoluminescence , materials science , thin film , electroluminescence , optoelectronics , sol gel , luminescence , visible spectrum , titanium dioxide , doping , annealing (glass) , light emitting diode , green light , ion , analytical chemistry (journal) , infrared , optics , nanotechnology , blue light , chemistry , physics , organic chemistry , layer (electronics) , chromatography , metallurgy , composite material
Er 3+ ions doped titanium dioxide (TiO 2 ) thin films have been prepared by sol-gel method. The photoluminescence both in visible light range (510-580 nm and 640-690 nm) and near infrared light range (1400-1700nm) have been observed. The photoluminescence excitation spectra demonstrate that energy transfer from wide band-gap TiO 2 o Er 3+ ions causes the infrared light emission. It is also found that the post annealing temperature can influence the luminescence intensity significantly. Based on sol-gel prepared TiO 2 :Er 3+ hin films, we fabricate light emitting device containing ITO/TiO 2 :Er 3+ /SiO 2 /n + -Si/Al structure. Both the visible and near infrared electroluminescence (EL) can be detected under the operation voltage as low as 5.6 V and the working current of 0.66 mA, which shows the lower power consumption compared with the conventional EL devices.
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