Back-illuminated AlGaN heterostructure solar-blind avalanche photodiodes with one-dimensional photonic crystal filter

AlGaN heterostructure solar-blind avalanche photodiodes (APDs) were fabricated on a double-polished AlN/sapphire template based on a separate absorption and multiplication (SAM) back-illuminated configuration. By employing AlGaN heterostructures with different Al compositions across the entire device, the SAM APD achieved an avalanche gain of over 1×10 5 at an operated reverse bias of 92 V and a low dark current of 0.5 nA at the onset point of breakdown. These excellent performances were attributed to the acceleration of holes by the polarization electric field with the same direction as the reverse bias and higher impact ionization coefficient of the low-Al-content Al 0.2 Ga 0.8 N in the multiplication region. However, the Al 0.2 Ga 0.8 N layer produced a photocurrent response in the out of the solar-blind band. To retain the solar-blind detecting characteristic, a periodic Si 3 N 4 /SiO 2 photonic crystal was deposited on the back of the AlN/sapphire template as an optical filter. This significantly improved the solar-blind characteristic of the device.